Conference on the Physics and Chemistry of Semiconductor Interfaces

The annual PCSI conference is devoted to achieving a fundamental understanding of the physical, chemical, structural, and electrical properties of semiconductor surfaces and interfaces. These studies include characterization of growth processes and the structure and influence of defects. Generous amounts of discussion time will be included in the program in order to emphasize the workshop character and to stimulate the exchange of new ideas.

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• Novel theoretical investigations of semiconductor interfaces

• Surface/interface issues related to nitride electronics and photonics

• Surface/interface issues related to spintronics

• Properties/limitations of high-k gate dielectrics on Si, SiGe, SiC, and compound semiconductors

• Passivation of compound semiconductor surfaces

• Bonding/electronic structures of compound semiconductor interfaces

• Surface/interface issues related to nanostructures

• Organic/inorganic interfaces

• Metal contacts to new semiconductor materials

• Interfaces in dissimilar materials

• Interfaces in semiconducting oxides and multifunctional materials

• High resolution probes of semiconducting interfaces

• Effects of interfaces on carrier transport and optical properties